To ensure proper operation under a variety of real-world conditions, RF power MOSFETs can undergo voltage-standing-wave-ratio (VSWR) testing to reveal considerable details about their failure modes.
Abstract: A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an ...
To ensure proper operation under a variety of real-world conditions, RF power MOSFETs can undergo voltage-standing-wave-ratio (VSWR) testing to reveal considerable details about their failure modes ...
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