産業技術総合研究所

Novel Ferroelectric NAND Flash Memory Cell Demonstrates 10000 Times More Program and Erase ...

- More than 100 million program/erase cycles at less than 6 volts - Shigeki Sakai (Leader) et al. of the Novel Electron Devices Group, the Nanoelectronics Research Institute (Director: Seigo Kanemaru) ...