A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.
Abstract: Power cycling accelerated aging experiment is an important way to study the evolution process and failure mechanism of insulated gate bipolar transistor (IGBT) power modules under high power ...
Abstract: The insulated-gate bipolar transistor (IGBT) module is a critical component of the traction converter in rail transit vehicles, and its reliability is essential for the safe operation of ...
Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...
CISSOID has expanded its standard product offerings with the release of the CMT-PLA1BL12300MA. This new 1200V/300A Half-Bridge IGBT Power Module combines advanced switching technology with a widely ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
CISSOID’s new CMT-PLA1BL12300MA half-bridge IGBT power module integrates Trench Gate Field Stop (TG-FS) IGBT technology in a CPAK-EDC package to support 1200 V blocking and 300 A nominal current with ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
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