The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge ...
The QJD1210006 and QJD1210007 1,200-V, 100-A SiC MOSFET modules operate from –40° to 200°C junction temperatures. The SiC MOSFET-based modules, compared to similar Si IGBTs, have 38% lower conduction ...
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