A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
Ferroelectric FET (FeFET) is a promising memory device because of its low-power, high-speed and high-capacity. Toward 3D integration for higher capacity, a team of researchers has developed a ...
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