K. Nakajima, S. Ono, Y. Kaneko, R. Murai, K. Shirasawa, T. Fukuda, H. Takato, M. A. Jensen, A. Youssef, E. Looney, T. Buonassisi, M. Benoit, S. Dubois, and A. Jouini ...
Noncontact crucible (NOC) method to grow Si ingots with a larger diameter than 45 cm is proposed as a novel crystal growth method, which has several merits comparing with the Czochralski (CZ) method ...
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