Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

Glasgow University researchers have led work that could lead to a new generation of diamond-based transistors for use in high-power electronics. The team has found a new way to use diamond as the ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...

Nexperia has announced 20 bipolar power transistors in 2 x 2mm DFN2020D-3 packaging, half of them automotive-qualified. The span 50 and 80V ratings, 1 to 3A currents and both npn and pnp polarities.