Abstract: A MOS transistor-array structure and an accurate measurement procedure of subthreshold leakage current variation is proposed. New contributions consist of two architectural improvements ...
Figure 1: Moore's Law and scaling of transistor dimensions. Whether one is considering future nanoscale planar silicon MOSFETs or an emerging technology to replace the MOSFET, the electronic ...
Abstract: This paper proposes a new test structure and a measurement method for measuring MOS transistors mismatches. The structure is based on the combination of two stacked MOS transistors and the ...
N-MOS and P-MOS transistors are analogous respectively to NPN and PNP transistors but their conduction mechanism is based completely on one type of carrier: holes for the PMOS and electrons for the ...
Figure 1: STM image and cluster size distribution of MoS 2 nanoclusters synthesized on Au(111). Figure 2: Ball model of a bulk-truncated hexagonal MoS 2 nanocluster exposing the low-index (101̄0) Mo ...
The common source amplifier is one of three basic single-stage amplifier topologies. The MOS version functions as an inverting voltage amplifier. The gate terminal of the transistor serves as the ...
Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia.
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