Abstract: Ga2O3 Schottky barrier diodes (SBDs) featuring a field plate (FP) and a composite SiO2/SiNx dielectric layer beneath the FP were fabricated, achieving a breakdown voltage (BV) of 2.4 kV at ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

Abstract: The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is ...

The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers. In power electronics, minimizing switching losses and improving thermal ...

Infineon’s CoolGaN™ Transistors with integrated Schottky diode enhance power system performance by minimizing dead time-related losses. Infineon Technologies AG has launched the world’s first gallium ...

Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers ...

Planar Schottky diodes serve as output rectifiers and ORing functions in redundant (n+1) power supplies. However, developers are demanding improved forward voltage drop (V F) and reverse leakage ...

A next-generation Schottky barrier diode achieves the rare combination of ultra-low forward voltage and reverse current, delivering superior protection for high-resolution image sensors in ADAS, ...