The engineering of ohmic contacts in silicon carbide has emerged as a critical challenge in developing high-performance electronic devices for harsh environments. These contacts serve as the interface ...

Silicon carbide (SiC) has emerged as a material of choice for high-temperature and high-power applications owing to its wide bandgap, high thermal conductivity and robust electrical properties. In ...

Abstract: For the first time, robust ohmic contacts were successfully prepared on oxygen-terminated intrinsic diamond with insulating surface and rare carrier concentration by transition metals (TMs, ...

Łukasiewicz Research Network, Institute of Microelectronics and Photonics, Warsaw 02-668, Poland ...

The interface between metal and semiconductor can form an Ohmic contact with very low resistance and yield a linear current-voltage curve prescribed by Ohm’s law. However, these contacts can ...

“Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades ...