AI is driving demand and higher prices for DRAM and NAND into 2026. Products using non-volatile memories to replace NOR and ...
As the scale of artificial intelligence (AI) models grows rapidly, securing the performance of memory semiconductors has become a key issue. NAND flash, a type of memory semiconductor with much larger ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
NIMS and the Tokyo University of Science have succeeded in developing an organic anti-ambipolar transistor capable of performing any one of the five logic gate operations (AND, OR, NAND, NOR or XOR) ...
Researchers at Samsung Electronics have succeeded in developing a next-generation ferroelectric-based NAND flash technology that reduces power consumption by up to 96%. As the demand for high-capacity ...
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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...
In brief: Japanese memory manufacturer Kioxia has announced it will unveil a trio of pioneering memory technologies at the IEEE International Electron Devices Meeting in San Francisco this December.
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