Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...
A technical paper titled “Low-Power Charge Trap Flash Memory with MoS 2 Channel for High-Density In-Memory Computing” was published by researchers at Kyungpook National University, Sungkyunkwan ...
AI training data sets are constantly growing, driving the need for hardware accelerators capable of handling terabyte-scale bandwidth. Among the array of memory technologies available, High Bandwidth ...
Researchers at Fudan University develop a picosecond-level flash memory device in their lab. GAO ERQIANG/CHINA DAILY Researchers from Fudan University in Shanghai have developed a picosecond-level ...
Among the many hazards encountered by space probes, exposure to radiation and huge temperature swings pose particular challenges for their electronic circuits. Now KAUST researchers have invented the ...
A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit per 400 picoseconds, setting a new record for the fastest semiconductor storage ...
Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...
Researchers from Shanghai-based Fudan University, who have developed a picosecond-level flash memory device, work in their lab. [Photo by Gao Erqiang/chinadaily.com.cn] Researchers from Shanghai-based ...
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