Fudan University in Shanghai has developed a memory device that improves the data read/write performance of flash memory to the picosecond (one trillionth of a second) level. The device, named ' PoX ' ...

Researchers at Fudan University develop a picosecond-level flash memory device in their lab. GAO ERQIANG/CHINA DAILY Researchers from Fudan University in Shanghai have developed a picosecond-level ...

Researchers from Shanghai-based Fudan University, who have developed a picosecond-level flash memory device, work in their lab. [Photo by Gao Erqiang/chinadaily.com.cn] Researchers from Shanghai-based ...

Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...

Ferroelectric FET (FeFET) is a promising memory device because of its low-power, high-speed and high-capacity. Toward 3D integration for higher capacity, a team of researchers has developed a ...

Recent advances in the field of artificial intelligence (AI) have opened new exciting possibilities for the rapid analysis of ...

Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...

Researchers at North Carolina State University (NC State; Raleigh) have created a soft memory device that thrives in wet environments and could someday lead to new biocompatible electronics. “We’ve ...