Abstract: Temperature Shock Test (TST) is a basic test for Insulated Gate Bipolar Transistor (IGBT) modules, which can effectively reveal the problems existing in device packaging. In engineering, the ...
A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.
Abstract: Power cycling accelerated aging experiment is an important way to study the evolution process and failure mechanism of insulated gate bipolar transistor (IGBT) power modules under high power ...
Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...
New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...
This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
CISSOID’s new CMT-PLA1BL12300MA half-bridge IGBT power module integrates Trench Gate Field Stop (TG-FS) IGBT technology in a CPAK-EDC package to support 1200 V blocking and 300 A nominal current with ...
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