A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

NAND型フラッシュメモリは一般的に、メモリセルにある「フローティングゲート」（浮遊ゲート）という電荷保持領域を使用して、データを格納する。ベンダーの中には耐久性と拡張性を高めようと、フローティングゲートとは別の手段で電荷を保持する ...

Many applications need to archive data or retain system information after power-down. These tasks fall to nonvolatile memory that must be in-circuit writable at least once, and often many times.

Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...

What do you get if you cross graphene, hexagonal boron nitride, and tungsten diselenide? Well, according to researchers at Hunan University, you get a field effect transistor that can act as both a ...