An ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F 2 cell can be achieved. “This paper proposes an ultra-scaled ...
New 3.0V 1Gb-4Gb Density 2KB/4KB page first-generation Serial (SPI) NAND and 1Gb-4Gb Density 2KB page third-generation parallel NAND, ML-3 product family with advanced security features SAN JOSE, ...
A technical paper titled “Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications” was published by researchers at Seoul National University of ...
NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...
New 3.0V 1Gb-4Gb Density 2KB/4KB page first-generation Serial (SPI) NAND and 1Gb-4Gb Density 2KB page third-generation parallel NAND, ML-3 product family with advanced security features SAN JOSE, ...
Recently, Toshiba Memory Corporation unveiled what they claim to be the world’s first three-dimensional triple-level cell (TLC) flash memory chips. This latest breakthrough in solid state storage ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation today announced the development of the world’s first [1] three-dimensional (3D) semicircular split-gate flash memory cell structure “Twin BiCS FLASH” using ...
Editor’s Note: NAND and NOR Flash memory play an integral role in embedded systems of all sorts but successful implementation requires careful attention to key ...
Apple's investments in acquiring flash memory expertise and technology appear to be centered around packing more storage capacity into Macs and iOS devices at lower prices, with the same level of ...
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