Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

IXYS introduce the D3Pak-HV package (TO-268 HV) that offers high voltage capability due to the 1200V rating designed in the creepage distance. The products introduced in the TO-268HV packages are Fast ...

The QRD3310001, QRC3310001, QRD3310002, and QRC3310002 dual fast-recovery diode modules specify a blocking voltage of 3.3V, maximum fast recovery time of 1.2 µs, and an isolation voltage of 6 kV.

Rohm has developed its 4th generation 650V fast recovery diodes (FRDs), balancing forward voltage and reverse-recovery time for high-power industrial and consumer equipment including air conditioners ...