How SEMulator3D can be used to study micro loading and manufacturing variability in an advanced DRAM process that exhibits a wiggling AA profile. In a DRAM structure, the charging and discharging ...
Steven Tomashot, Senior Technical Staff Member, IBM Microelectronics Division, Essex Junction, Vermont, Subramanian S. Iyer, Manager, System Scale Integration, IBM Microelectronics Division, Hopewell ...
AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, manufacturers are rapidly accelerating advanced logic and DRAM development. Chief ...
SK Hynix has succeeded in developing the world's first 10-nanometer (nm; 1 nanometer = one billionth of a meter) 6th generation (1c) DRAM semiconductor. The leading-edge DRAM process is applied to all ...
LONDON — Belgian research organization IMEC has extended its work on 32-nm CMOS device scaling to include a project on DRAM MIMCAP (metal-insulator-metal capacitors) process technology. The group says ...
To push access times toward those of SRAM while achieving much higher densities, embedded DRAM needs a structure that differs from both commodity DRAM and conventional embedded DRAM. The challenge is ...
Forward-looking: Memory technology has continuously improved over the last decade to meet the increasing demand for higher bit density, performance, and energy efficiency. Micron is touting new ...
One night, the lights in Samsung Electronics' semiconductor research building stayed on late as usual. It was that day when the hands of A, a core researcher in DRAM development at Samsung Electronics ...
SK Hynix, the world’s second-largest memory chip producer, has started the production of DRAM with the latest 10-nanometer (nm) process technology. SK Hynix said its 8 Gigabit Lower Power Double Date ...
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