Abstract: Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV) ...

Abstract: We demonstrate a gate all around (GAA) negative capacitance FET(NCFET). The device provides an equivalent oxide thickness (EOT) of 6.5A˚ with unscavenged SiO2 interlayer (IL), and a high ...

During the manufacture of semiconductor wafers, thickness measurement forms an important part of this process, since it provides process engineers with the information required to ensure that ...

The GUI allows users to input various physical parameters related to the MOS capacitor and calculates critical electrical properties based on theoretical models. One of the primary outputs is the ...