Abstract: Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV) ...
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During the manufacture of semiconductor wafers, thickness measurement forms an important part of this process, since it provides process engineers with the information required to ensure that ...
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