Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...

The hybrid STE59DE100 ESBT (emitter-switched bipolar transistor) STE50DE100 has a collector-source voltage of 1 kV and collector currents as high as 50A. The product combines bipolar and MOSFET ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

Nexperia is extending its portfolio of products in the DPAK package to cover applications from 2 A to 8 A and from 45 V up to 100 V. The nine new power bipolar transistors added to the MJD series ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...

We like to pretend that our circuit elements are perfect because, honestly, it makes life easier and it often doesn’t matter much in practice. For a normal design, the fact that a foot of wire has a ...