We need to add the Stoichiometric coefficient in the chemical equations. The main reason behind balancing the equation is the Law of Conservation of Energy. You need to balance the same number of ...

In this study, a series of dewetting experiments of pure and Hf-doped Ni films on sapphire and HfO2 substrates were conducted in order to measure the change in interface energy of the Ni-Al2O3 ...

In this paper we investigate growth of Al2O3 and performance of Al2O3/GaN MOS structures using O2, Ar and NH3 pre-treatment of GaN surface. Rapid thermal annealing (RTA) after the growth is also ...

Abstract: Precise technique can remove Al2O3 film slowly and evenly by adjusting the gas ratio, pressure, power, temperature and other parameters in ICP plasma. The volatile will release occurs during ...